Hitachi’s UHF ECR Plasma Etch Chamber

• 450MHz UHF Plasma Source
• Designed for Dielectric Materials
• Mid-Level Density Plasma
• Fluorine Radical Control
• Fast Maintenance Recovery
• Dual Zone Electrode Head
• EPD/OES

For next-generation etching of advanced oxides and dielectric films, Hitachi provides the UHF ECR chamber. The UHF ECR chamber’s capabilities include high etch rate, precise anisotropic etching, excellent plasma uniformity, and repeatability. Fluorine radical control mechanisms are incorporated to increase anisotropy and enhance profile control. A unique chamber access design allows for easy maintenance, maximum uptime, and increased productivity. The UHF ECR chamber can run production wafers within four hours of a wet clean.

The UHF ECR etch chamber is specifically designed for dielectric etch including SiO₂, High Aspect Ratio Contact (HARC), and AlCu etch.