The FB-2100 allows rapid and precise specimen preparation for both transmission and scanning electron microscopy of semiconductors and other advanced materials.

• High precision and high milling rates
• The use of a new low aberration ion optical system allows a maximum beam current of 30nA at an accelerating voltage of 40 kV. Optionally a high current ion columncan be ordered with a guaranteed beam current of greater than 60 nAmps
• A microsampling TEM/STEM in-situ lift out system is available optionally
• Site specific micro-sampling preparation from bulk samples is achieved in a completely dry vacuum environment allowing preparation of samples free from foreign particles, oxidation, charging and other problems
• Minimizing specimen damage
• Compatible specimen holders for FB-2100 and Hitachi TEMs/SEMs are provided for specimen preparation with high precision and reliability. This arrangement allows milling and microscopy without speciment repositioning when transferring the sample between your Hitachi TEM or SEM minimizing specimen damage during repeated preparation and microscopy.
• A wide range of beam energies
• Operators can choose the optimum operating voltage (or energy) for milling and microscopy to best suit the specimen. Lowering the kV to 2kV minimizes the amorphos damage layer.